Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering

Thermoelectric bismuth telluride thin films were prepared on SiO₂/Si substrates by radio-frequency (RF) magnetron sputtering. Co-sputtering method with Bi and Te targets was adopted to control films' composition. Bi_xTe_y thin films were elaborated at various deposition temperatures with fixed RF powers, which yielded the stoichiometric Bi₂Te₃ film deposition without intentional substrate heating. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above 290 °C. Change of dominant phase from rhombohedral Bi₂Te₃ to hexagonal BiTe was confirmed with X-ray diffraction analyses. Seebeck coefficients of all samples have negative value, indicating the prepared Bi_xTe_y films are n-type conduction. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of 225 °C (about − 55 μV/K and 3 × 10^− 4 W/K²·m, respectively). Deterioration of thermoelectric properties at higher temperature could be explained with Te deficiency and resultant BiTe phase evolution due to the evaporation of Te elements from the film surface.     

ZAO透明导电薄膜的制备及性质

ZAO（ZnO：Al）透明导电薄膜是一种具有高的载离子浓度和宽禁带的半导体氧化物，电学和光学性能优异。极具应用前景。本文介绍了ZAO薄膜的制备现状、特性、磁控溅射参数对其电学和光学性质的影响以及今后研究的方向。     

金属掺杂对In2O3薄膜光学性质的影响

研究了射频溅射法制备的金属／半导体类型颗粒膜的光学特性。通过样品透射谱分析，发现金属Fe的掺杂使半导体In2O3的带间跌迁由直接跃迁变为间接跃迁；随Fe所占体积份数的增加，局域态尾变宽，带隙变窄。这是由于掺入Fe颗粒后。母体材料与金属颗粒的界面处表面态增多，以及母体材料的非晶化引起的。     

C2H2／H2比率对铝合金上电弧离子镀类金刚石膜的结构和腐蚀性能的影响

本文研究了在2024铝合金衬底上，环境气氛中C2H2／H2比率对电弧离子镀沉积类金刚石膜层的结构和腐蚀性能的影响。Raman谱分析表明，随着C2H2／H2比率的降低，其D峰和G峰的强度比ID／IG值增加，这意味着膜层中sp^3／sp^2键比率减少，膜层的力学性能下降；同时，G峰的峰位向高波数方向移动，峰的半高宽变窄；D峰的峰位也在向高波数方向移动变化，但峰的半高宽变化相反，逐渐宽化。膜层可以进一步提高铝合金试样的抗腐蚀能力，从自腐蚀电位看，随着C2H2／H2比率的降低，膜层试样的抗腐蚀性能略逐渐增加。     

大功率半导体激光器腔面镀膜的理论研究

从平面波假设出发推导了多层薄膜的特性矩阵，得到了膜系的反射率计算公式。研究了腔面反射率对大功率半导体激光器的外量子效率、阈值增益和输出功率比的影响，并给出了整个膜系反射率随膜层的光学厚度、折射率差及其层数的变化趋势。该模型对半导体激光器的腔面膜层设计具有实际的指导意义。     

B4C/Ni多孔复合材料的制备及性能

采用粉末冶金法制备了B4C/Ni多孔复合材料。对制得的试样进行了扫描电镜（SEM）观察和抗压强度的测试，并摘要计算得出了试样的孔隙度。分析结果表明，复合材料的孔隙度随烧结温度的升高而下降；抗压强度随孔隙度的下降而增大；并且复合材料中镍含量越高材料抗压强度越大。根据后续浸渗金属液体的要求，此多孔复合材料要达到高孔隙度、较高强度和较高硼含量等指标。所以综合分析结果和后续要求最终确定了最佳体积百分含量为碳化硼15%、镍55%、造孔剂碳酸钠30%和最佳烧结温度800℃。     

Surface-enhanced Raman spectroscopy of the growth of ultra-thin organosilicon plasma polymers on nanoporous Ag/SiO2-bilayer films

A new method for the synthesis of thin bilayer films as surface-enhanced Raman spectroscopy (SERS) active substrates was developed which is based on the combination of plasma polymerization, plasma calcination and Ag-film deposition by means of physical vapor deposition. The surface morphology of prepared substrates was characterized by field emission scanning electron microscopy, atomic force microscopy and electrochemical impedance spectroscopy. These substrates lead to high surface enhancement factors proven by the spectroscopic analysis of adsorbed Trans-1,2 bis-(4-pyridyl) ethylene molecules. By this preparation technique, SERS-active films can be deposited on any substrate. The new SERS substrates were successfully applied to study the growth of ultra-thin hexamethyldisiloxane plasma polymer films. The Raman intensity of the CH-stretching vibration was studied as a function of the film thickness. The surface enhancement decreased sharply at about 20 nm. The resulting increase in the intensity of Raman peaks for thin adsorbed plasma polymer films was observed to be a combination of the electromagnetic enhancement mechanism and the high surface area increase of the rough Ag-surface.     

Thermomechanical behavior of Ti-Ni shape memory alloy films deposited by DC magnetron sputtering

In this study, thermomechanical properties of titanium-nickel (Ti-Ni) shape memory alloy (SMA) films are investigated in order to derive constitutive relations. Ti-Ni SMA films, deposited by DC magnetron sputtering under controlled film composition, are characterized by uniaxial tensile tests. At room temperature (R.T.), Ti-Ni films having Ti contents less than 50 at% exhibit superelastic behavior, and those having Ti contents greater than 50 at% exhibit shape memory behavior. However, the Ni—53.2 at% Ti film fractured at a tensile strain of 0.8% because of an increase in brittleness with increasing Ti content. At elevated temperatures, Ti-Ni films having Ti contents of 50.2 to 52.6 at% undergo phase change from martensite to austenite. The Young's modulus of the Ti-Ni films depends on temperature at each phase, regardless of film composition. Film composition does, however, affect the measured material constants b_A, b_M, c_A, and c_M. Stress-strain curves calculated from the constructed constitutive equation closely agree with those obtained from tensile tests, for both the martensite and austenite phases. The constitutive equations are expected to find great utility in the design of Ti-Ni film-actuated microelectromechanical systems (MEMS).     

Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO₂/Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO₂ layers were deposited by plasma coating. The crystal structure and the residual stress in the deposited multi-layer film were investigated using in-lab. X-ray equipment and a synchrotron radiation device that emits ultra-high-intensity X-rays. It was found that the SiO₂ film was amorphous and both the Cu and TiN films had a strong {1 1 1} orientation. The Cu and TiN layers in the multi thick (Cu and TiN:1.0 μm)-layer film and multi thin (0.1 μm)-layer film exhibited tensile residual stresses. Both tensile residual stresses in the multi thin-layer film are larger than the multi thick-layer film. After annealing at 400 °C, these tensile residual stresses in both the films increased with increasing the annealing temperature. Surface swelling formations, such as bubbles were observed in the multi thick-layer film. However, in the case of the multi thin-layer films, there was no change in the surface morphology following heat-treatment.     

Effect of annealing on the characteristics of Au layers grown on the high-temperature deposited Ni50Fe50 layers

80 nm-thick Ni₅₀Fe₅₀ layers were sputter-deposited on glass substrates at 400 °C and then Au layers were sputter-deposited on the Ni₅₀Fe₅₀ layers. The Au/Ni₅₀Fe₅₀ bilayer films were annealed in a vacuum of 5×10⁻⁴ Pa from 250 to 450 °C for 30 min or 90 min. The characteristics of the Au layers were studied by Auger electron spectroscopy, field emission scanning electron microscopy, X-ray diffraction and a four-point probe technique. When the annealing temperature reaches 450 °C, Fe and Ni atoms diffuse markedly into the Au layer and the Fe content is more than the Ni content. When the annealing temperature is lower than 450 °C, the grain size of the Au layers does not change markedly with annealing temperature. However, as the annealing temperature reaches 450 °C, the annealing promotes the grain growth of the Au layer. As the annealing temperature exceeds 300 °C, the resistivity of the bilayer films increases with increasing annealing temperature. The diffusion of Fe and Ni atoms into the Au layer results in an increase in the resistivity of the annealed bilayer film. Large numbers of Fe and Ni atoms diffusing into the Au layer of the annealed Au/Ni₅₀Fe₅₀ bilayer film lead to a significant decrease in the lattice constant of the Au layer.